Power MOSFET, P-Channel, QFET®, -100 V, -11.5 A, 290 mΩ, TO-220

Obsolete

Overview

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for lowvoltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

  • Audio Amplifiers
  • DC/DC Converters
  • DC Motor Control

  • -11.5 A, -100 V, RDS(on) = 290 mΩ (Max.) @ VGS = -10 V, ID = -5.75 A
  • Low Gate Charge (Typ. 21 nC)
  • Low Crss (Typ. 65 pF)
  • 100% Avalanche Tested
  • 175ºC Maximum Junction Temperature Rating

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQP12P10

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

P-Channel

PowerTrench® T1

TO-220

Low-Medium Voltage

Standard

0

Single

0

-100

290

-4

-4

-11.5

75

-

-

-

21

620

11.5

470

220

65

Price N/A

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