FQP11P06

Power MOSFET, P-Channel, QFET^®, -60 V, -11.4 A, 175 mΩ, TO-220

Overview

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for lowvoltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Applications

DC/DC Converters
High Efficiency Switching
Power Management

Features

-11.4 A, -60 V, R_DS(on) = 175 mΩ (Max.) @ V_GS = -10 V, I_D = -5.7 A
Low Gate Charge (Typ. 13 nC)
Low Crss (Typ. 45 pF)
100% Avalanche Tested
175ºC Maximum Junction Temperature Rating

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQP11P06

Last Shipments

TO-220-3

340AT

TUBE

1000

-60

185

P-Channel

Single

-4

-11.4

420

Price N/A

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MOSFETs | FQP11P06

Power MOSFET, P-Channel, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220

Overview

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Power MOSFET, P-Channel, QFET^®, -60 V, -11.4 A, 175 mΩ, TO-220