Power MOSFET, N-Channel, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220

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Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  • Other Audio & Video
  • 9.5A, 200V, RDS(on) = 0.36Ω@VGS = 10V
  • Low gate charge ( typical 20 nC)
  • Low Crss ( typical 40.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQP10N20C

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

200

360

N-Channel

Single

±30

4

9.5

72

-

-

-

20

395

Price N/A

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