FQP10N20C

Power MOSFET, N-Channel, QFET^®, 200 V, 9.5 A, 360 mΩ, TO-220

Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Applications

Other Audio & Video

Features

9.5A, 200V, RDS(on) = 0.36Ω@V_GS = 10V
Low gate charge ( typical 20 nC)
Low Crss ( typical 40.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQP10N20C

Last Shipments

TO-220-3

340AT

TUBE

1000

200

360

N-Channel

Single

±30

9.5

395

Price N/A

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MOSFETs | FQP10N20C

Power MOSFET, N-Channel, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220

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Power MOSFET, N-Channel, QFET^®, 200 V, 9.5 A, 360 mΩ, TO-220