FQD8P10TM

-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®

Overview

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Applications

Power Train

Features

6.6A, -100V, R_DS(on) = 0.53O @V_GS = -10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 30 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Qualified to AEC Q101
RoHS Compliant

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQD8P10TM-F085

Active

DPAK-3 / TO-252-3

369AS

260

REEL

2500

-100

530

P-Channel

Single

±30

-4

-6.6

360

$0.7109

Product Number:

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MOSFETs | FQD8P10TM_F085

-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®

Overview

Product List

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