FQB8N90CTM

Power MOSFET, N-Channel, QFET^®, 900 V, 6.3 A, 1.9 Ω, D2PAK

Overview

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Applications

High Efficiency Switch Mode Power Supplies

Features

6.3 A, 900 V, R_DS(on) = 1.9 Ω (Max.) @ V_GS = 10 V
Low Gate Charge (Typ. 35 nC)
Low C_rss (Typ. 12 pF)
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQB8N90CTM

Active

D2PAK-3 / TO-263-2

418AJ

245

REEL

800

900

1900

N-Channel

Single

6.3

171

1600

$1.2626

Product Number:

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MOSFETs | FQB8N90CTM

Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK

Overview

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Power MOSFET, N-Channel, QFET^®, 900 V, 6.3 A, 1.9 Ω, D2PAK