Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK

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Overview

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

  • High Efficiency Switch Mode Power Supplies
  • 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V
  • Low Gate Charge (Typ. 35 nC)
  • Low Crss (Typ. 12 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQB8N90CTM

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

900

1900

N-Channel

Single

5

5

6.3

171

-

-

-

35

1600

$1.2626

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