FQA70N10

Power MOSFET, N-Channel, QFET^®, 100 V, 70 A, 23 mΩ, TO-3P

Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Applications

Uninterruptible Power Supply
Other Industrial
Switched Mode Power Supplies
Audio Amplifiers
DC Motor Control
Variable Switching Power Applications

Features

70A, 100V
R_DS(on)= 23mΩ(Max.) @V_GS = 10 V, I_D = 35A
Low Gate Charge ( Typ. 85nC)
Low C_rss ( Typ. 150pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating

Material Composition

Product Change Notification

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQA70N10

Active

TO-3P-3L

340BZ

TUBE

450

100

N-Channel

Single

±25

214

2500

$1.4153

Product Number:

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MOSFETs | FQA70N10

Power MOSFET, N-Channel, QFET®, 100 V, 70 A, 23 mΩ, TO-3P

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Power MOSFET, N-Channel, QFET^®, 100 V, 70 A, 23 mΩ, TO-3P