Power MOSFET, N-Channel, QFET®, 100 V, 70 A, 23 mΩ, TO-3P

Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

  • Uninterruptible Power Supply
  • Other Industrial
  • Switched Mode Power Supplies
  • Audio Amplifiers
  • DC Motor Control
  • Variable Switching Power Applications

  • 70A, 100V
    RDS(on) = 23mΩ(Max.) @VGS = 10 V, ID = 35A
  • Low Gate Charge ( Typ. 85nC)
  • Low Crss ( Typ. 150pF)
  • 100% Avalanche Tested
  • 175°C Maximum Junction Temperature Rating

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQA70N10

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Active

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-3PN

Small Signal

Standard

0

Single

0

100

23

±25

4

70

214

-

-

-

85

2500

42

430

720

150

$1.4153

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