FQA40N25

Power MOSFET, N-Channel, QFET^®, 250 V, 40 A, 70 mΩ, TO-3P

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Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Applications

Other Audio & Video
Switched Mode Power Supplies
Active Power Factor Correction (PFC)
Electronic Lamp Ballasts

Features

40A, 250V
R_DS(on)= 70mΩ(Max.) @V_GS = 10 V, I_D = 20A
Low Gate Charge ( Typ. 85nC)
Low C_rss ( Typ. 70pF)
100% Avalanche Tested

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQA40N25

Active

TO-3P-3L

340BZ

TUBE

450

250

N-Channel

Single

±30

280

3100

$1.8884

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MOSFETs | FQA40N25

Power MOSFET, N-Channel, QFET®, 250 V, 40 A, 70 mΩ, TO-3P

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Power MOSFET, N-Channel, QFET^®, 250 V, 40 A, 70 mΩ, TO-3P