IGBTs | FGB20N60S_F085

IGBT, 600V, 20A, 2.2V, D2PAK
Field Stop

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Overview

Using novel field-stop IGBT technology, ON Semiconductor’s new series of field-stop IGBTs offer optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.

  • High current capability
  • Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A
  • High input impedance
  • Fast switching
  • Qualified to Automotive Requirements of AEC-Q101
  • RoHS complaint

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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FGB20N60SFD-F085

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

-

600

40

-

1.9

0.13

0.31

111

-

63

-

-

208

-

$1.6374

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Reliability Data

Die Related Summary Data

Device: FGB20N60SFD-F085

Equivalent to wafer fab process: 3B,IM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IM

0

975477967

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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