Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, TO-247-2L

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Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • UPS / ESS
  • Solar inverter
  • EV Charger
  • Max Junction Temperature 175 °C
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant

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Reference Price

FFSH2065A

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Lifetime

CAD Model

Pb

A

H

P

TO-247-2

NA

0

TUBE

450

N

D1

Single

650

20

1.75

105

200

$3.5372

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