Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, TO-247-2L

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Overview

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

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  • Max Junction Temperature 175 °C
  • AEC-Q101 qualified and PPAP Capable
  • No Reverse Recovery / No Forward Recovery
  • High Surge Current Capacity
  • Ease of Paralleling
  • Positive Temperature Coefficient

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FFSH10120A-F085

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Pb

A

H

P

TO-247-2

NA

0

TUBE

450

Y

D1

Single

1200

10

1.75

90

200

$3.8731

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