P-Channel (-1.5V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω

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Overview

This Single P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the r DS(on)@VGS = –1.5 V.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A
  • Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A
  • Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A
  • Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A
  • HBM ESD protection level = 1400 V (Note 3)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDY102PZ

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Active

CAD Model

Pb

A

H

P

SOT-523FL

1

260

REEL

3000

N

-20

-

P-Channel

Single

8

-1

-0.83

0.625

700

500

0.8

2.2

100

$0.076

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