N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ

Obsolete

Overview

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

  • This product is general usage and suitable for many different applications.

  • 6.5A, 30V
    RDS(ON) = 0.035Ω @ VGS = 10V
    RDS(ON) = 0.055Ω @ VGS = 4.5V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT459N

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Obsolete

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

N

N-Channel

PowerTrench® T1

SOT-223-4

Small Signal

Logic

0

Single

0

30

35

20

2

6.5

3

NA

-

-

12

NA

-

-

-

-

Price N/A

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