FDS9958_F085

Dual P-Channel PowerTrench^® MOSFET -60V, -2.9A, 105mΩ

Overview

These P-channel logic level specified MOSFETs are produced using an advanced PowerTrench^® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance
These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

Applications

Infotainment
Portable Navigation
Other
Power Train
Safety and Control
Comfort and Convenience
Body Electronics
Vehicle Security Systems
Other Automotive
Load Switch
Power Management

Features

Max r_DS(on) = 105 mΩ at V_GS = -10 V, I_D = -2.9 A
Max r_DS(on) = 135 mΩ at V_GS = -4.5 V, I_D = -2.5 A
Qualified to AEC Q101
RoHS Compliant

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS9958-F085

Obsolete

SOIC-8

751EB

260

REEL

2500

-60

Q1=Q2=105

P-Channel

Dual

±20

-3

-2.9

Q1=Q2=135

765

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDS9958_F085

Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ

Overview

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Dual P-Channel PowerTrench^® MOSFET -60V, -2.9A, 105mΩ