Dual P-Channel PowerTrench® MOSFET -80V, -2.1A, 183mΩ

Obsolete

Overview

This P-channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Synchronous Rectifier

  • Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
  • Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely usedsurface mount package
  • 100% UIL Tested
  • RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to FDS8935

Buy/Parametrics Table

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8935

Loading...

Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

-80

Q1=Q2=183

±20

-3

-2.1

3.1

-

Q1=Q2=273.0

-

7

661

2.6

34

47

24

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.