Name: Dual P-Channel PowerTrench ® MOSFET -80V, -2.1A, 183mΩ
Brand: Dual P-Channel PowerTrench ® MOSFET -80V, -2.1A, 183mΩ
SKU: FDS8935

Dual P-Channel PowerTrench^® MOSFET -80V, -2.1A, 183mΩ

Overview

This P-channel MOSFET is produced using an advanced PowerTrench^® process that has been optimized for r_DS(on), switching performance and ruggedness.

Applications

This product is general usage and suitable for many different applications.
Load Switch
Synchronous Rectifier

Features

Max r_DS(on) = 183 mΩ at V_GS = -10 V, I_D = -2.1 A
Max r_DS(on) = 247 mΩ at V_GS = -4.5 V, I_D = -1.9 A
High performance trench technology for extremely low r_DS(on)
High power and current handling capability in a widely usedsurface mount package
100% UIL Tested
RoHS Compliant

Material Composition

Product Change Notification

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CAD Models

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MSL Type

MSL Temp (°C)

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Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_GS Max (V)

V_gs(th) Max (V)

I_d Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Q_gd Typ @ V_GS = 4.5 V (nC)

Q_rr Typ (nC)

C_oss Typ (pF)

C_rss Typ (pF)

Reference Price

FDS8935

Last Shipments

SOIC-8

751EB

260

REEL

2500

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

Dual

-80

Q1=Q2=183

±20

-3

-2.1

3.1

Q1=Q2=273.0

661

2.6

Price N/A

Product Number:

Distributor		Stock	BUY

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Small Signal MOSFETs | FDS8935

Dual P-Channel PowerTrench® MOSFET -80V, -2.1A, 183mΩ

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Dual P-Channel PowerTrench^® MOSFET -80V, -2.1A, 183mΩ