FDS8882

N-Channel PowerTrench^® MOSFET 30V, 9A, 20.0mΩ

Overview

The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest r_DS(on) while maintaining excellent switching performance.

Applications

This product is general usage and suitable for many different applications.
Notebook System Regulators
DC/DC Converters

Features

Max r_DS(on)= 20.0 mΩ at V_GS = 10 V, I_D = 9 A
Max r_DS(on) = 22.5 mΩ at V_GS = 4.5 V, I_D = 8 A
High performance trench technology for extremely low r_DS(on) and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant

Material Composition

Product Change Notification

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS8882

Obsolete

SOIC-8

751EB

260

REEL

2500

N-Channel

Single

2.5

22.5

707

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDS8882

N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ

Overview

Product List

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N-Channel PowerTrench^® MOSFET 30V, 9A, 20.0mΩ