N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ

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Overview

The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

  • This product is general usage and suitable for many different applications.
  • Notebook System Regulators
  • DC/DC Converters
  • Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
  • Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
  • High performance trench technology for extremely low rDS(on) and fast switching
  • High power and current handling capability
  • Termination is Lead-free and RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8882

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

30

20

N-Channel

Single

20

3

9

2.5

-

22.5

28

8

707

Price N/A

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