FDS8813NZ

N-Channel PowerTrench^® MOSFET 30V, 18.5A, 4.5mΩ

Overview

This N–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 4.5 mΩ at V_GS = 10 V, I_D = 18.5 A
Max r_DS(on) = 6.0 mΩ at V_GS = 4.5 V, I_D = 16 A
HBM ESD protection level of 5.6kV typical (note 3)
High performance trench technology for extremely low r_DS(on)
High power and current handling capability
RoHS compliant

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS8813NZ

Active

SOIC-8

751EB

260

REEL

2500

4.5

N-Channel

Single

18.5

2.5

3115

$0.5973

Product Number:

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MOSFETs | FDS8813NZ

N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

Overview

Product List

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N-Channel PowerTrench^® MOSFET 30V, 18.5A, 4.5mΩ