N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

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Overview

This N–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.5 A
  • Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 16 A
  • HBM ESD protection level of 5.6kV typical (note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8813NZ

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

30

4.5

N-Channel

Single

20

3

18.5

2.5

-

6

-

28

3115

$0.5973

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