P-Channel Shielded Gate PowerTrench® MOSFET -150V, -2.2A, 255mΩ

Overview

This P-Channel MOSFET is produced using an advanced PowerTrench® process that incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior switching performance.

  • Active Clamp Switch
  • Load Switch

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 255 mΩ at VGS = -10 V, ID = -2.2 A
  • Max rDS(on) = 290 mΩ at VGS = -6 V, ID = -2 A
  • Very Low rDS(on) Mid Voltage P-channel Silicon Technology Optimised for Low Qg
  • This Product is Optimised for Fast Switching Applications as well as Load Switch Applications
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS86267P

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

-150

255

±25

-4

-2.2

2.5

-

-

-

7

806

1.9

157

54

1.6

$0.5597

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