FDS86252

N-Channel Power Trench^® MOSFET 150V, 4.5A, 55mΩ

Overview

This N-Channel MOSFET is produced using an advanced Power Trench^® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.

Applications

Consumer Appliances
DC-DC Conversion

Features

Max r_DS(on) = 55 mΩ at V_GS = 10 V, I_D = 4.5 A
Max r_DS(on) = 80 mΩ at V_GS = 6 V, I_D = 3.7 A
High performance trench technology for extremely low r_DS(on)
High power and current handling capability in a widely used surface mount package
100% UIL Tested
RoHS Compliant

Material Composition

Product Change Notification

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS86252

Active

SOIC-8

751EB

260

REEL

2500

150

N-Channel

Single

±20

4.5

5.2

718

$0.3624

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDS86252

N-Channel Power Trench® MOSFET 150V, 4.5A, 55mΩ

Overview

Product List

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N-Channel Power Trench^® MOSFET 150V, 4.5A, 55mΩ