Dual P-Channel Logic Level PowerTrench® MOSFET -30V, -6A, 32mΩ

Overview

These P-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Power Management
  • Battery Charging Circuit
  • DC/DC Converters

  • -6 A, -30 V
    RDS(ON) = 0.032 Ω @ VGS = -10 V
    RDS(ON) = 0.045 Ω @ VGS = -4.5 V.
  • Low gate charge (14.5nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6975

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

-30

Q1=Q2=32

20

-3

-6

2

-

Q1=Q2=45

5

14.5

1540

-

-

-

-

$0.5296

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