30V N-Channel PowerTrench® SyncFET™ 14.5A, 6.0mΩ

Obsolete

Overview

The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Low Side Notebook

  • 14.5A, 30V
    RDS(on) = 6.0mΩ @ VGS = 10V
    RDS(on) = 7.25mΩ @ VGS = 4.5V
  • Includes SyncFET Schottky body diode
  • Low gate charge (45nC typical)
  • High performance trench technology for extremely low RDS(ON) and fast switching
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6676AS

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

30

6

20

3

14.5

2.5

NA

-

38

25

NA

-

-

-

-

Price N/A

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