Single P-Channel Logic Level PowerTrench™ MOSFET -30V, -11A, 14mΩ

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Overview

This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

  • This product is general usage and suitable for many different applications.
  • -11 A, -30 V
    RDS(ON) = 0.014 W @ VGS = -10 V
    RDS(ON) = 0.020 W @ VGS = -4.5 V.
  • Low gate charge (30nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6675

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

-30

7.8

P-Channel

Single

20

-3

-11

2.5

-

12

25

30

3000

Price N/A

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