Dual N & P-Channel PowerTrench® MOSFET 40V

Last Shipments

Overview

These dual N- and P-Channel MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.
  • Inverter
  • Power Supplies

  • Q1 N-Channel
    Max. RDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A
    Max. RDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A
  • Q2 P-Channel
    Max. RDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A
    Max. RDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS4897AC

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±40

N:26.0,P:39.0

±20

±3

N: 6.1, P: -5.2

2

-

N:31.0,P:65.0

15

15

N: 796, P: 765

N: 2.9, P: 3.2

N: 7, P: 12

N: 95, P: 135

N: 65, P: 80

Price N/A

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