MOSFETs | FDS4501H

Complementary PowerTrench® Half-Bridge MOSFET

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Overview

This complementary MOSFET half-bridge device is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Power Management
  • Load Switch
  • Battery Protection
  • Q1 N-Channel
    9.3A, 30V
    Max. RDS(on) = 18 mΩ at VGS = 10 V,
    Max. RDS(on) = 23 mΩ at VGS = 4.5 V
  • Q2 P-Channel
    -5.6A, -20V
    Max. RDS(on) = 46 mΩ at VGS = -4.5 V
    Max. RDS(on) = 63 mΩ at VGS = -2.5 V

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS4501H

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

±20

-

Complementary

Dual

8

Q1: 3; Q2: -1.5

N: 9.3, P: -5.6

2.5

-

N: 23, P: 46

-

13

1312

Price N/A

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