P-Channel PowerTrench® MOSFET -20V, -6A, 37mΩ

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Overview

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 37 mΩat VGS = -4.5 V, ID = -5 A
  • Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A
  • Max rDS(on)= 65 mΩ at VGS = -1.8 V, ID = -3 A
  • Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection level > 1600V (Note 3)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDME510PZT

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Active

CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

5000

Y

-20

-

P-Channel

Single

8

-1

-6

2.1

50

37

14

16

1120

$0.2989

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