Dual N-Channel PowerTrench® MOSFET 30 V, 167 A, 1.0 mΩ

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Overview

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.

  • Isolated DC-DC Synchronous Rectifier
  • Common Ground Load Switches
  • Common Source Configuration to Eliminate PCB Routing
  • Large Source Pad on Bottom of Package for Enhanced Thermals
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMD8630

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

30

Q1=Q2=1

N-Channel

Dual

3

3

167

43

-

Q1=Q2=1.3

8.8

46

7090

Price N/A

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