20V N & P - Channel PowerTrench® MOSFET

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Overview

The N & P-Channel MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

  • This product is general usage and suitable for many different applications.
  • Q1 0.7A, 20V
    RDS(ON) = 300mΩ @ VGS = 4.5V
    RDS(ON) = 400mΩ @ VGS = 2.5V
  • Q2 -0.6A, -20V
    RDS(ON) = 420mΩ @ VGS = -4.5V
    RDS(ON) = 630mΩ @ VGS = -2.5V
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • SC70-60 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDG6332C

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

Y

±20

-

Complementary

Dual

12

±1.5

N: 0.7, P: -0.6

0.3

N:400,P:630

N: 300, P: 420

1.1

1.4

114

$0.1448

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