FDC610PZ

P-Channel PowerTrench^® MOSFET, -30V, -4.9A, 42mΩ

Overview

This Channel MOSFET is produced using an advanced PowerTrench^® process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 42mΩ at V_GS = -10V, I_D = -4.9A
Max r_DS(on) = 75mΩ at V_GS = -4.5V, I_D = -3.7A
Low gate charge (17nC typical).
High performance trench technology for extremely low r_DS(on).
SuperSOT™-6 package: small footprint (72% smaller than standard SO-8) low profile (1mm thick).
RoHS compliant

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDC610PZ

Active

TSOT-23-6

419BL

260

REEL

3000

-30

P-Channel

Single

-3

-4.9

1.6

10.5

755

$0.1653

Product Number:

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MOSFETs | FDC610PZ

P-Channel PowerTrench® MOSFET, -30V, -4.9A, 42mΩ

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P-Channel PowerTrench^® MOSFET, -30V, -4.9A, 42mΩ