Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK

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Overview

SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

  • This product is general usage and suitable for many different applications.
  • 650V @TJ = 150°C
  • Typ. RDS(on) = 150mΩ
  • Ultra low gate charge ( Typ. Qg = 75nC )
  • Low effective output capacitance ( Typ. Coss.eff = 165pF )
  • 100% avalanche tested
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCB20N60FTM

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

600

190

N-Channel

Single

±30

5

20

208

-

-

-

75

2370

$2.421

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