25 A, 150 V NPN Bipolar Power Transistor

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Overview

The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.

  • High Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) 2N6338
    VCEO(sus) = 150 Vdc (Min) - 2N6341
  • High DC Current Gain
    hFE = 30 - 120 @ IC = 10 Adc
    hFE = 12 (Min) @ IC = 25 Adc
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • Fast Switching Times @ IC = 10 Adc
    tr = 0.3 µs (Max)
    ts = 1.0 µs (Max)
    tf = 0.25 µs (Max)
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N6341G

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Last Shipments

CAD Model

Pb

A

H

P

TO-204-2

NA

0

FTRAY

100

N

NPN

General Purpose

1

25

150

180

6

2.5

1.8

30

120

40

200

Price N/A

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