High Power NPN Bipolar Power Transistor

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Overview

The High Power Bipolar NPN Transistor is designed for use in power amplifier and switching circuits applications.

  • Low Collector-Emitter Saturation Voltage
    VCE(sat)=0.75 Vdc (Max) @ IC = 10 Adc
  • Pb-Free Package is Available

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N5302G

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Last Shipments

CAD Model

Pb

A

H

P

TO-204-2

NA

0

FTRAY

100

N

NPN

General Purpose

0.75

30

60

60

-

1.8

1.7

15

60

2

200

Price N/A

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