Product Change Notification
| Change Notification # |
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16056 |
| Revision |
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| Type of Notification |
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PRODUCT BULLETIN |
| Change Title |
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60V Schottky Rectifier ESD Improvement & Datasheet High Temp Ir Limit Change |
| Issue Date |
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2007-10-03 |
| Affected Product Family |
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| Description |
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This is to inform customers that ON Semiconductor will implement changes to the current process of the 60V Schottky rectifier devices to improve their ESD capabilities. This change will require ON Semiconductor to update the datasheet limits for the high temperature leakage (Ir) parameters.
For the 1A & 2A 60V devices, the high temperature leakage parameter (Ir) will be revised to 12mA.
For the 10A 60V devices, the high temperature leakage parameter (Ir) will be revised to 15mA.
For the 20A 60V devices, the high temperature leakage parameter (Ir) will be revised to 20mA.
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| Key Items Affected by Change |
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| Key Milestones |
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| Effective Date: |
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2007-10-03 |
| Sample Info: |
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| Possible Replacements |
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N/A |
For more information on this Process Change Notification, please
contact your local ON Semiconductor sales office.
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