ON Semiconductor Expands 100 Volt N-Channel MOSFET Portfolio with New High Current Capability, Robust Load Performance Solutions100 percent avalanche tested MOSFETs deliver industry-leading ratings to withstand high voltage spikes in power supply and motor control applications![]() PHOENIX, Ariz. – Feb 1, 2010– ON Semiconductor (Nasdaq: ONNN) a premier supplier of high performance, energy efficient silicon solutions for green electronics has expanded its N-channel power MOSFET portfolio with the addition of 12 new 100 volt (V) devices. With industry-leading avalanche ratings of up to 500 millijoules (mJ), ON Semiconductor’s fully tested N-channel power MOSFETs are ideal for use in designs where voltage overstress resulting from unclamped inductive loads is a concern. Typical applications for the company’s 100 V power MOSFET devices include industrial motor control, power supplies, power inverters in uninterruptible power supplies (UPS), and direct gas injection (DGI) in automotive. Key specification features of these Pb-free, RoHS compliant solutions include:
• RDS(on) as low as 13 milliohm (mΩ) “With the potential for high voltage spikes due to switching inductive loads, and the drive for greater energy efficiency, ON Semiconductor’s N-channel power MOSFETs provide a robust and dependable solution” said Paul Leonard, vice president and general manager of ON Semiconductor’s MOSFET products division. “These new additions to our 100 volt product family give customers greater choice and help them find the optimum device for their specific applications.” Packaging and Pricing For more information, please visit http://www.onsemi.com Follow @onsemi on Twitter: www.twitter.com/onsemi About ON Semiconductor # # # ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its Web site in this news release, such information on the Web site is not to be incorporated herein. |