Low-Voltage Transistors
NMOS Transistor |
Typical
Value |
Unit |
Vt (20/0.7, linear extrapolated) |
0.74 |
V |
Vmax=Vbd |
5.5 |
V |
Ids (20/0.7, Vds=Vgs= 5 V) |
358 |
µA/µm |
PMOS Transistor |
Vt (20/0.7, linear extrapolated) |
-0.95 |
V |
Vmax=Vbd |
5.5 |
V |
Ids (20/0.7, Vds=Vgs= 5 V) |
-176 |
µA/µm |
Low Vt PMOS Transistor |
Vt (20/1.2, linear extrapolated) |
-0.78 |
V |
Vmax=Vbd |
5.5 |
V |
Ids (20/1.2, Vds=Vgs= 5 V) |
-121 |
µA/µm |
Bipolar Transistors
NPN Floating @ 100 V Ae=5 µm² Area=3529 µm² |
Typical
Value |
Unit |
Hfe |
60 |
- |
Bvceo @ Ie=1 µA |
25 |
V |
Bvces min |
60 |
V |
Imax@142°C |
0.3 |
mA |
NPN Floating @ 100 V Ae= 49 µm² Area=4490 µm² |
Hfe |
40 |
- |
Bvceo @ Ie=1 µA |
25 |
V |
Bvces min |
60 |
V |
Imax@142°C |
2.7 |
mA |
NPN Floating @ 60 V Ae= 5 µm² Area=1352 µm² |
Hfe |
58 |
- |
Bvceo @ Ie=1 µA |
25 |
V |
Bvces min |
60 |
V |
Imax@142°C |
0.96 |
mA |
NPN Floating @ 60 V Ae= 19 µm² Area=3081 µm² |
Hfe |
45 |
- |
Bvceo @ Ie=1 µA |
25 |
V |
Bvces min |
25 |
V |
Imax |
1.2 |
mA |
Substrate PNP Ae= 460 µm² Area=2289 µm², collector grounded |
Hfe |
22 |
- |
Bvceo @ Ie=1 µA |
30 |
V |
Vbe |
0.57 |
V |
PNP Floating @ 100 V Area=1542 µm² |
Hfe |
700 |
- |
Bvceo @ Ie=1 µA |
5.5 |
V |
Bvces min |
5.5 |
V |
Imax@142°C |
0.3 |
mA |
PNP Area=5139 µm² |
Hfe |
800 |
- |
Bvceo @ Ie=1 µA |
25 |
V |
Bvces min |
40 |
V |
Imax@142°C |
0.3 |
mA |
PNP Area=98354 µm² |
Hfe |
880 |
- |
Bvceo @ Ie=1 µA |
25 |
V |
Bvces min |
80 |
V |
Imax@142°C |
0.3 |
mA |
Diodes
Poly Diode Parameter, W=2.2 µm |
Typical
Value |
Unit |
BV |
6.76 |
V |
Imax (2.2 µm) |
~300 |
µA |
Ileak (2.2 µm) @-5 V |
~90 |
µA |
90 V Floating HV Diode Area=6432 µm² |
BV |
90 |
V |
Isub/Ia (Ia=2.4 mA) |
~2 |
% |
Zener diode
Smallest diode (3784 µm²) |
BV |
9.5 |
V |
Ron in Vbd mode |
1560 |
Ω |
Capacitors (Parameter @ 25°C)
Poly/Thin GateOx/N++ [CAPA] |
Typical
Value |
Unit |
Cplate |
0.75 |
fF/µm² |
Vbd_max (full lifetime) |
15 |
V |
Poly/Poly (medium voltage floating) |
Cplate |
0.36 |
fF/µm² |
Vbd_max (full lifetime) |
30 |
V |
Metal1/Poly/Metal2 (high voltage floating) |
Cplate |
0.075 |
fF/µm² |
Vbd_max (full lifetime) |
100 |
V |
Resistors
Resistor Type |
Typical
Value |
Unit |
High-Resistance Poly [HIPO] |
1825 |
Ω/square |
Medium-Resistance Poly [MOPO] |
190 |
Ω/square |
Low-Resistance Poly [LOPO] |
27 |
Ω/square |
N-Well |
1000 |
Ω/square |
Pbody Diffusion in Ntub |
1250 |
Ω/square |
N+ Diffusion in P-well |
67.5 |
Ω/square |
P+ Diffusion in N-well |
96 |
Ω/square |
|
|
High-Voltage Transistors
Floating NMOS Transistor @ 100 V |
Typical
Value |
Unit |
Vt (20/0.7, linear extrapolated) |
0.74 |
V |
Vmax=Vfloat to P-substrate |
100 |
V |
Vgsmax= Vbdmax |
5.5 |
V |
Ids (20/0.7, Vd=Vg= 5 V) |
358 |
µA/µm |
Floating PMOS Transistor @ 100 V |
Vt (25/0.7, linear extrapolated) |
-1.1 |
V |
Vmax=Vfloat to P-substrate |
100 |
V |
Vgsmax= Vbdmax |
-5.5 |
V |
Ids (25/0.7, Vd=Vg= 5 V) |
-160 |
µA/µm |
100 V NDMOS |
Vt (W=40) |
1 |
V |
Vmax=Vbd |
100 |
V |
Vgsmax (full lifetime) |
12 |
V |
IDS (40/4, Vds=40 V, Vgs=4.0 V) |
1210 |
µA |
Ron*W |
74 |
kΩ*µm |
Ron*Area |
1532 |
mΩ*mm² |
30 V NDMOS (Thin Ox) |
Vt (W=40) |
0.67 |
V |
Vmax=Vbd |
30 |
V |
Vgsmax (full lifetime) |
5.5 |
V |
IDS (40/4, Vds20V, Vgs=5.0 V) |
4675 |
µA |
Ron*W |
31.8 |
kΩ*µm |
Ron*Area |
372 |
mΩ*mm² |
30 V NDMOS (Thick Ox) |
Vt (W=40) |
1.03 |
V |
Vmax=Vbd |
30 |
V |
Vgsmax (full lifetime) |
12 |
V |
IIDS (40/4, Vds=15 V, Vgs=4.0 V) |
1450 |
µA/µm |
Ron*W |
22 |
kΩ*µm |
Ron*Area |
257 |
mΩ*mm² |
100 V Self-Aligned Floating NDMOS |
Vt (W=40) |
2.43 |
V |
Vmax=Vbd |
95 |
V |
Vgsmax (full lifetime) |
12 |
V |
IDS (40/1.2, Vds=40 V, Vgs=5.0 V) |
2050 |
µA/µm |
Ron*W |
33 |
kΩ*µm |
Ron*Area |
488 |
mΩ*mm² |
60 V Self-Aligned Floating NDMOS |
Vt (W=40) |
2.4 |
V |
Vmax=Vbd |
60 |
V |
Vgsmax (full lifetime) |
12 |
V |
IDS (40/1.2, Vds=40 V, Vgs=5.0 V) |
2250 |
µA/µm |
Ron*W |
17.6 |
kΩ*µm |
Ron*Area |
153 |
mΩ*mm² |
40 V Self-Aligned Floating NDMOS |
Vt (W=40) |
2.43 |
V |
Vmax=Vbd |
40 |
V |
Vgsmax (full lifetime) |
12 |
V |
IDS (40/1.2, Vds=25 V, Vgs=5.0 V) |
2200 |
µA/µm |
Ron*W |
11.6 |
kΩ*µm |
Ron*Area |
87 |
mΩ*mm² |
90 V PDMOS |
Vt (W=40) |
-1.13 |
V |
Vmax=Vbd |
-100 |
V |
|Vgsmax| (full lifetime) |
12 |
V |
IDS (40/4, Vds=-40 V, Vgs=-4.0 V) |
980 |
µA/µm |
Ron*W |
77 |
kΩ*µm |
Ron*Area |
1050 |
mΩ*mm² |
75 V PDMOS |
Vt (W=40) |
-1.13 |
V |
Vmax=Vbd |
-75 |
V |
|Vgsmax| (full lifetime) |
12 |
V |
IDS (40/3.4, Vds=-40 V, Vgs=-4.0 V) |
1125 |
µA/µm |
Ron*W |
59 |
kΩ*µm |
Ron*Area |
596 |
mΩ*mm² |
40 V PDMOS |
Vt (W=40) |
-1.13 |
V |
Vmax=Vbd |
-40 |
V |
|Vgsmax| (full lifetime) |
12 |
V |
IDS (40/3.2, Vds=-25 V, Vgs=-4.0 V) |
1175 |
µA/µm |
Ron*W |
45 |
kΩ*µm |
Ron*Area |
380 |
mΩ*mm² |
100 V Depleted PDMOS |
Vmax=Vbd |
-100 |
V |
|Vgsmax| (full lifetime) |
5.5 |
V |
IDS (40/3, Vds=-40 V, Vgs=0 V) |
180 |
µA/µm |
60 V Power-Kit NDMOS (optimized for switching applications) |
Vt (W=40) |
2.45 |
V |
Vmax=Vbd |
60 |
V |
Vgsmax (full lifetime) |
12 |
V |
IDS (40/1.2, Vds=25 V, Vgs=5.0 V) |
2200 |
µA/µm |
Ron*W |
18 |
kΩ*µm |
Ron*Area |
115 |
mΩ*mm² |
40 V Power-Kit NDMOS (optimized for switching applications) |
Vt (W=40) |
2.45 |
V |
Vmax=Vbd |
40 |
V |
Vgsmax (full lifetime) |
12 |
V |
IDS (40/1.2, Vds=25 V, Vgs=5.0 V) |
2350 |
µA/µm |
Ron*W |
11.3 |
kΩ*µm |
Ron*Area |
65 |
mΩ*mm² |
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