Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Charging Station
  • Motor Drive
  • Low On Resistance
  • High Junction Temperature
  • Ultra Low Gate Charge
  • Low Effective Output Capacitance
  • This device is RoHS Compliant

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ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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Tj Max (°C)

Reference Price

NTBG080N120SC1

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Active

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

REEL

800

Y

M1

1200

30

80

56

79

175

$6.1124

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