****************************** IGBT Electrical Parameters *************************** ** Product: FGB40N60SM ** 600V, 40A Field Stop IGBT ** Model Format: SPICE2G6 **----------------------------------------------------------------------------------- ** Simulator: SIMetrix 7.2 **----------------------------------------------------------------------------------- .SUBCKT FGB40N60SM C G E *#ASSOC Category=IGBT Symbol=FGB40N60SM * LE 74 E 1.658n RE 83 74 1.28e-3 TC=3.05e-3 RC 85 C 9.10e-3 TC=4.1e-3 RG G 82 1.25 CGC 82 C 1p CGD 92 93 5.06n CGE E 82 1830p M1 81 82 83 83 MOS W=1u L=1u Q1 83 81 85 VPNP R1 92 0 1 R2 91 94 1 RLV 95 0 1 DBE 85 81 DE DSD 83 81 DO DHV 94 93 DR DLV 94 95 DR 56 D1 91 92 DLIM D2 94 0 DLIM FFB 82 81 VFB 1 VFB 93 0 DC 0 ESD 96 93 POLY(1) 83 81 19 1 MLV 95 96 93 93 SW EGD 91 0 82 81 1 .MODEL SW NMOS + LEVEL=3 VTO=0 KP=5 .MODEL VPNP PNP + IS=8.05e-11 NF=1.5 BF=0.1241 CJE=8.0e-9 + TF=1.09e-9 XTB=4.44 EG=1.16 .MODEL MOS NMOS + LEVEL=3 VMAX=2.0e5 THETA=0.064 ETA=2e-3 + VTO=5.75 KP=25.8 .MODEL DR D + IS=1.0e-14 CJO=1.0e-10 M=0.84 VJ=0.46 .MODEL DO D + IS=1.0e-14 BV=660 CJO=2.0e-9 M=0.58 + VJ=0.54 .MODEL DE D + IS=1.0e-14 BV=30.0 N=2 .MODEL DLIM D + IS=1.00e-7 * .ENDS FGB40N60SM ******************************* IGBT Thermal Parameters **************************** ** Package: TO-263AB/D2-PAK **---------------------------------------------------------------------------------- .SUBCKT FGB40N60SM_Thermal TH TL *#ASSOC Category=IGBT Symbol=FGB40N60SM * CTHERM1 TH 6 6.40e-5 CTHERM2 6 5 4.50e-4 CTHERM3 5 4 5.10e-3 CTHERM4 4 3 7.50e-3 CTHERM5 3 2 1.20e-2 CTHERM6 2 TL 3.84e-2 RTHERM1 TH 6 4.00e-4 RTHERM2 6 5 6.00e-3 RTHERM3 5 4 3.00e-2 RTHERM4 4 3 5.60e-2 RTHERM5 3 2 9.60e-2 RTHERM6 2 TL 2.42e-1 * .ENDS FGB40N60SM_Thermal **---------------------------------------------------------------------------------- ** Creation: Jan.-08-2016 Rev.: 2.0 ** Fairchild Semiconductor