Phototransistor Optocouplers, High Speed, 4-Pin DIP

Overview

The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, RBE, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.

  • Digital Logic Inputs
  • Microprocessor Inputs
  • Power Supply Monitor
  • Twisted Pair Line Receiver
  • Telephone Line Receiver
  • High Speed Performance ~ 30kHz
  • Current Transfer Ratio: 100% to 600%
  • Minimum BVCEO of 80V Guaranteed
  • Safety and Regulatory Approvals:
  • UL1577, 5,000 VACRMS for 1 Minute
  • DIN EN/IEC60747-5-5, 850V Peak Working Insulation Voltage

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3

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channels

CTR (Min) (%)

CTR (Max) (%)

CTR tested @ IF (mA)

VCE(sat) (Max) (V)

BVCEO (Min) (V)

BVCBO (Min) (V)

BVECO (Min) (V)

ton (Max) (µs)

toff (Max) (µs)

VISO (Min) (V)

TOPR (Min) (°C)

TOPR (Max) (°C)

Reference Price

FOD819

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Obsolete

CAD Model

Pb

A

H

P

PDIP-4

NA

0

TUBE

2000

No

1

100

600

1.5

0.3

80

-

2

-

-

5000

-55

110

Price N/A

More Details

FOD819S

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Obsolete

CAD Model

Pb

A

H

P

PDIP-4 GW

1

260

UNTBX

2000

No

1

100

600

1.5

0.3

80

-

2

-

-

5000

-55

110

Price N/A

More Details

FOD819SD

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Obsolete

CAD Model

Pb

A

H

P

PDIP-4 GW

1

260

REEL

1000

No

1

100

600

1.5

0.3

80

-

2

-

-

5000

-55

110

Price N/A

More Details

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