FFSP15120A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-220-2L

Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Applications

Industrial

End Products

UPS / ESS
Solar
EV Charger

Features

Max Junction Temperature 175 °C
Avalanche Rated 145 mJ
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Family

Configuration

V_RRM (V)

I_F(ave) (A)

V_F (Max)

I_FSM (A)

I_R (Max) (µA)

Reference Price

FFSP15120A

Active

TO-220-2

340BB

TUBE

800

Single

1200

1.75

115

200

$3.9146

Product Number:

Distributor		Stock	BUY

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Silicon Carbide (SiC) Diodes | FFSP15120A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-220-2L

Overview

Product List

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