NTMTS1D6N10MC

Single N-Channel Power MOSFET 100V, 273A, 1.7mΩ, PQFN 8x8

Overview

This N-Channel PTNG 100V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.

Applications

Motor Control
DC-DC Converters
Battery Management/Protection

End Products

Power Tools, E-Scooters, Drones
Battery Packs/ Energy Storage Units
Telecom, Netcom
Power Supplies

Features

Very Low R_DS(on), Shielded Gate Trench Technology
Low Profile PQFN 8x8 package
Maximum junction temperature of 175C
RoHS Compliant
Soft Body diode with low Qrr

Material Composition

Product Change Notification

Product List

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NTMTS1D6N10MCTXG

Active

DFNW-8

507AP

260

REEL

3000

100

1.7

N-Channel

Single

273

291

~NA~

106

7630

$5.0463

Product Number:

Distributor		Stock	BUY

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MOSFETs | NTMTS1D6N10MC

Single N-Channel Power MOSFET 100V, 273A, 1.7mΩ, PQFN 8x8

Overview

Product List

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