FDS8958A

Dual N & P-Channel PowerTrench^® MOSFET 30V

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Overview

These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications

This product is general usage and suitable for many different applications.

Features

Q1: N-Channel
7.0 A, 30 V
R_DS(ON) = 28 mΩ @ V_GS = 10 V
R_DS(ON) = 40 mΩ @ V_GS = 4.5 V
Q2: P-Channel
-5 A,-30 V
R_DS(ON) = 52 mΩ @ V_GS = -10 V
R_DS(ON) = 80 mΩ @ V_GS = -4.5 V
Fast switching speed
High power and handling capability in a widely usedsurface mount package

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS8958A

Lifetime

SOIC-8

751EB

260

REEL

2500

±30

N: 28.0 , P: 52.0

Complementary

Dual

±20

± 3.0

N: 7.0, P: 5.0

N: 40.0 , N: 80.0

N: 11.5, P:9.6

N: 575, Q2:528

$0.2975

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MOSFETs | FDS8958A

Dual N & P-Channel PowerTrench® MOSFET 30V

Overview

Product List

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Dual N & P-Channel PowerTrench^® MOSFET 30V