Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29mΩ

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Overview

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • Infotainment
  • Portable Navigation
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • Inverter
  • Power Supplies
  • Max rDS(ON) = 29mΩ, @VGS = 10V
  • Max rDS(ON) = 36mΩ, @VGS = 4.5V
  • Low gate charge
  • High performance trench technology for extremely lowrDS(ON)
  • High power and current handling capability
  • Qualified to AEC Q101
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8949-F085

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

40

Q1=Q2=29

N-Channel

Dual

±20

3

6

2

-

Q1=Q2=36

-

7.7

715

Price N/A

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