FDS89161LZ

Dual N-Channel Shielded Gate PowerTrench^® MOSFET 100V, 2.7A, 105mΩ

Overview

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench^® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Applications

Consumer Appliances
DC-DC Conversion

Features

Shielded Gate MOSFET Technology
Max r_DS(on) = 105 mΩat V_GS = 10 V, I_D = 2.7 A
Max r_DS(on) = 160 mΩat V_GS = 4.5 V, I_D = 2.1 A
High performance trench technology for extremely low r_DS(on)
High power and current handling capability in a widely used surface mount package
CDM ESD protection level > 2KV typical (Note 4)
100% UIL Tested
RoHS Compliant

Material Composition

Product Change Notification

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS89161LZ

Active

SOIC-8

751EB

260

REEL

2500

100

Q1:105.0, Q2: 105.0

N-Channel

Dual

±20

2.2

2.7

Q1:160.0, Q2: 160.0

2.1

227

$0.5026

Product Number:

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MOSFETs | FDS89161LZ

Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ

Overview

Product List

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Dual N-Channel Shielded Gate PowerTrench^® MOSFET 100V, 2.7A, 105mΩ