FDD1600N10ALZD

BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 mΩ

Overview

This N-Channel MOSFET is produced using a PowerTrench^® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.

Applications

LED TV
Consumer Appliances

Features

R_DS(on) = 124 mΩ( Typ.)@ V_GS = 10 V, I_D = 3.4 A
R_DS(on) = 175 mΩ ( Typ.)@ V_GS = 5.0 V, I_D = 2.1 A
Low Gate Charge ( Typ.2.78 nC)
Low C_rss ( Typ. 2.04 pF)
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD1600N10ALZD

Obsolete

DPAK-5

369AL

260

REEL

2500

100

124

N-Channel

with Si Diodes

±20

2.8

6.8

14.9

200

2.78

169

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDD1600N10ALZD

BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 mΩ

Overview

Product List

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