ON Semiconductor TF252: Junction FET -20V 1mA IDSS;140 to 350uA N-Channel Single USFP

Overview

Specifications

Datasheet: Junction FET -20V 1mA IDSS;140 to 350 uA N-Channel Single USFP
Rev. 1 (433.0kB)

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Product Overview

Product Description

TF252 is Junction FET -20V 1mA IDSS;140 to 350 uA N-Channel Single USFP for Microphone Applications

Features

High gain : GV=1.0dB typ (VCC=2V, RL=2.2k, Cin=5pF, VIN=10mV, f=1kHz)
Ultrasmall package facilitates miniaturization in end products 1.0mm0.6mm0.27mm (max 0.3mm)
Best suited for use in Electret Condenser Microphone for audio equipments and telephones
Excellent voltage characteristics
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Protection diode in

Technical Documentation & Design Resources
Data Sheets (1)

Availability and Samples

Product

Status

Compliance

Description

Package

MSL*

Container

Budgetary Price/Unit

Type

Case Outline

Type

Qty.

TF252-4-TL-H

Active

Pb-free

Halide free

Junction FET -20V 1mA IDSS;140 to 350uA N-Channel Single USFP

Tape and Reel

10000

$0.1148

TF252-5-TL-H

Active

Pb-free

Halide free

Junction FET -20V 1mA IDSS;140 to 350uA N-Channel Single USFP

Tape and Reel

10000

$0.1148

Sample

Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)

I_DSS Max (uA)	:	240
I_DSS Min (uA)	:	140
Channel Polarity	:	N Channel
C_iss Max (pF)	:	3.1
	:	Pb-free
	:	Halide free

Market Leadtime (weeks)	:
ON Semiconductor (2013-05-22 00:00)	:	5,760,000

I_DSS Max (uA)	:	350
I_DSS Min (uA)	:	210
Channel Polarity	:	N Channel
C_iss Max (pF)	:	3.1
	:	Pb-free
	:	Halide free

Market Leadtime (weeks)	:
ON Semiconductor (2013-05-22 00:00)	:	1,360,000

Datasheet: Junction FET -20V 1mA IDSS;140 to 350 uA N-Channel Single USFP
Rev. 1 (433.0kB)

»View Material Composition
»Product Change Notification (1)

Product Overview

Product

Compliance

Status

Description

Channel Polarity

I_DSS Min (uA)

I_DSS Max (uA)

V_(BR)GSS Min (V)

C_iss Max (pF)

C_rss Max (pF)

Package Type

TF252-4-TL-H

Pb-free

Halide free

Active

Junction FET -20V 1mA IDSS;140 to 350uA N-Channel Single USFP

N Channel

140

240

3.1

TF252-5-TL-H

Pb-free

Halide free

Active

Junction FET -20V 1mA IDSS;140 to 350uA N-Channel Single USFP

N Channel

210

350

3.1

Datasheet: Junction FET -20V 1mA IDSS;140 to 350 uA N-Channel Single USFP
Rev. 1 (433.0kB)

»View Material Composition
»Product Change Notification (1)

Product Overview

Case Outlines

Datasheet: Junction FET -20V 1mA IDSS;140 to 350 uA N-Channel Single USFP
Rev. 1 (433.0kB)

»View Material Composition
»Product Change Notification (1)

Product Overview

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TF252: Junction FET -20V 1mA IDSS;140 to 350uA N-Channel Single USFP