SSN1N45B

Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.

Applications

Lighting

Features

0.5A, 450V, R_DS(on) = 4.25Ω @ V_GS = 10 V
Low Gate Charge (typical 6.5 nC)
Low C_rss (typical 6.5 pF)
100% Avalanche Tested
Improved dv/dt Capability
Gate-Source Voltage ± 50V Guaranteed

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

SSN1N45BTA

Last Shipments

TO−92 3LD 4.75x4.80

135AV

FNFLD

2000

450

4250

N-Channel

Single

±50

0.5

0.9

23.6

6.5

185

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | SSN1N45B

Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92

Overview

Product List

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