Power MOSFET, 20V, 125mΩ, 2A, Single N-Channel

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Overview

This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.

  • Load Switch
  • Air Conditioner
  • Low On-Resistance
  • 1.8V drive
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen Free and RoHS compliance
  • Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

SCH1430-TL-H

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Obsolete

CAD Model

Pb

A

H

P

SOT-563 / SCH-6

1

260

REEL

5000

N

20

-

N-Channel

Single

12

1.3

2

0.8

190

125

-

1.8

128

Price N/A

More Details

SCH1430-TL-W

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Obsolete

CAD Model

Pb

A

H

P

SOT-563 / SCH-6

1

260

REEL

5000

N

20

-

N-Channel

Single

12

1.3

2

0.8

190

125

-

1.8

128

Price N/A

More Details

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