Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NVMFD5873NL: Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level.

Product Description
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Features   Benefits
     
  • Low RDS(on)
 
  • Reduced conduction losses
  • Low Capacitance
 
  • Reduced input losses
  • Low gate charge
 
  • Reduced switching losses
  • AEC-Q101 Qualified
 
  • Suitable for automotive applications
  • Devices are Pb free, Halogen free, and BFR free
 
  • RoHS compliant
  • 5 x 6 x 1 mm Dual SO-8FL package
 
  • Smaller PC boards and modules
Applications   End Products
  • Motor control
  • High Side / Low Side switch
 
  • Chassis Control Module
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level.   N-Channel   Dual   60   20   2.5   58   107     16.5   13   16.5   30.5   8.8   18   1560   145   96   SO-8FL Dual / DFN-8 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level.   N-Channel   Dual   60   20   2.5   58   107     16.5   13   16.5   30.5   8.8   18   1560   145   96   SO-8FL Dual / DFN-8 
Package Availability
Type
PB free
Standard
SO-8FL Dual / DFN-8 x