Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTMS4802N: Power MOSFET 30V 18A 4 mOhm Single N-Channel SO-8

Product Description
Power MOSFET 30V 18A 4 mOhm Single N-Channel SO-8
Features
 
  • Low RDS(on)/sub> to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • This is a PbFree Device
Applications
  • DCDC Converters
  • Synchronous MOSFET
  • Printers
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 18A 4 mOhm Single N-Channel SO-8   N-Channel   Single   30   20   2.5   18   2.5     5.5   4   36   75   13   40   5300   880   460   SOIC-8 
Package Availability
Type
PB free
Standard
SOIC-8 x