Energy Efficient Innovations
Product Overview
For complete documentation, see the data sheet.
Printed On: 7/11/2015
NTMFS6B14N: Power MOSFET 100V 50A 14mΩ Single N−Channel SO-8FL
Product Description
Power MOSFET 100V 50A 14mΩ Single N−Channel SO-8FL
Features
Benefits
Low RDS(on)
Minimize conduction losses
Low input capacitance
Minimize switching losses
Applications
End Products
Point of load modules
Netcom, Telecom
Servers
Selected Electrical Specifications
Product
Compliance
Status
Description
Channel Polarity
Configuration
V
(BR)DSS
Min (V)
V
GS
Max (V)
V
GS(th)
Max (V)
I
D
Max (A)
P
D
Max (W)
r
DS(on)
Max @ V
GS
= 2.5 V (mΩ)
r
DS(on)
Max @ V
GS
= 4.5 V (mΩ)
r
DS(on)
Max @ V
GS
= 10 V (mΩ)
Q
g
Typ @ V
GS
= 4.5 V (nC)
Q
g
Typ @ V
GS
= 10 V (nC)
Q
gd
Typ @ V
GS
= 4.5 V (nC)
Q
rr
Typ (nC)
C
iss
Typ (pF)
C
oss
Typ (pF)
C
rss
Typ (pF)
Package Type
NTMFS6B14NT1G
Pb-free
Halide free
Active
Power MOSFET 100V 50A 14mΩ Single N−Channel SO-8FL
N-Channel
Single
100
±20
4
50
77
15
20
50
1300
260
18
SO-8FL / DFN-5
NTMFS6B14NT3G
Pb-free
Halide free
Active
Power MOSFET 100V 50A 14mΩ Single N−Channel SO-8FL
N-Channel
Single
100
±20
4
50
77
15
20
50
1300
260
18
SO-8FL / DFN-5
Package Availability
Type
PB free
Standard
SO-8FL / DFN-5
x
For more information please contact your local sales support at www.onsemi.com