Energy Efficient Innovations
Product Overview
For complete documentation, see the data sheet.
Printed On: 7/11/2015
NTMFS6B03N: Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL
Product Description
Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL
Features
Benefits
Low RDS(on)
Minimize conduction losses
Low input capacitance
Minimize switching losses
Applications
End Products
Point of load modules
Netcom, Telecom
Server
Selected Electrical Specifications
Product
Compliance
Status
Description
Channel Polarity
Configuration
V
(BR)DSS
Min (V)
V
GS
Max (V)
V
GS(th)
Max (V)
I
D
Max (A)
P
D
Max (W)
r
DS(on)
Max @ V
GS
= 2.5 V (mΩ)
r
DS(on)
Max @ V
GS
= 4.5 V (mΩ)
r
DS(on)
Max @ V
GS
= 10 V (mΩ)
Q
g
Typ @ V
GS
= 4.5 V (nC)
Q
g
Typ @ V
GS
= 10 V (nC)
Q
gd
Typ @ V
GS
= 4.5 V (nC)
Q
rr
Typ (nC)
C
iss
Typ (pF)
C
oss
Typ (pF)
C
rss
Typ (pF)
Package Type
NTMFS6B03NT1G
Pb-free
Halide free
Active
Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL, Power MOSFET 100 V, 4.8 mΩ, 132 A, Single N−Channel
N-Channel
Single
100
±20
4
132
165
4.8
58
120
4200
760
31
SO-8FL / DFN-5
NTMFS6B03NT3G
Pb-free
Halide free
Active
Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL, Power MOSFET 100 V, 4.8 mΩ, 132 A, Single N−Channel
N-Channel
Single
100
±20
4
132
165
4.8
58
120
4200
760
31
SO-8FL / DFN-5
Package Availability
Type
PB free
Standard
SO-8FL / DFN-5
x
For more information please contact your local sales support at www.onsemi.com