Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTMFS6B03N: Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL

Product Description
Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL
Features   Benefits
     
  • Low RDS(on)
 
  • Minimize conduction losses
  • Low input capacitance
 
  • Minimize switching losses
Applications   End Products
  • Point of load modules
 
  • Netcom, Telecom
  • Server
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL, Power MOSFET 100 V, 4.8 mΩ, 132 A, Single N−Channel   N-Channel   Single   100   ±20   4   132   165       4.8     58     120   4200   760   31   SO-8FL / DFN-5 
 Pb-free 
 Halide free 
 Active     Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL, Power MOSFET 100 V, 4.8 mΩ, 132 A, Single N−Channel   N-Channel   Single   100   ±20   4   132   165       4.8     58     120   4200   760   31   SO-8FL / DFN-5 
Package Availability
Type
PB free
Standard
SO-8FL / DFN-5 x