Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTMFS4C35N: Power MOSFET 30V 80A 3.2 mOhm Single N-Channel SO-8FL

Product Description
30 V, 80 A, Single N-Channel, SO-8 FL
Features   Benefits
     
  • Low RDS(on) to Minimize Conduction Losses
 
  • Improve System Efficiency
  • Low Capacitance to Minimize Driver Losses
 
  • Improve System Efficiency
  • Optimized Gate Charge to Minimize Switching Losses
 
  • Improve Signal Quality
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS
    Compliant
   
Applications   End Products
  • CPU Power Delivery, DCDC Converters
 
  • Notebook, Desktop, Server, Game Consoles, Point of Load and other Computing Products
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 80A 3.2 mOhm Single N-Channel SO-8FL   N-Channel   Single   30   20   2.2   80   33     4.2   3.2   15   32.5   5.5   30   2300   1097   46   SO-8FL / DFN-5 
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 80A 3.2 mOhm Single N-Channel SO-8FL   N-Channel   Single   30   20   2.2   80   33     4.2   3.2   15   32.5   5.5   30   2300   1097   46   SO-8FL / DFN-5 
Package Availability
Type
PB free
Standard
SO-8FL / DFN-5 x